BLD6G22LS-50,112

Overview

The BLD6G22LS-50,112 is an LDMOS RF power transistor designed for high-efficiency amplification in the 2.11 GHz to 2.17 GHz frequency range. It operates with a rated voltage of 65 V and a typical test voltage of 28 V. The device delivers an output power of 8 W with a gain of 13.3 dB at a drain current of 170 mA. It features a CDFM4 (SOT-1130B) package suitable for surface-mount applications.

Feature Summary

• Optimized for high efficiency in digital pre-distortion architectures
• Designed specifically for multi-carrier W-CDMA signal processing
• Utilizes robust LDMOS technology for reliable RF performance

Applications

• W-CDMA multi-carrier base station power amplifiers
• Digital pre-distortion linear amplifier modules
• RF power amplification in cellular communication infrastructure

Procurement Notes

Verify the complete part number including the suffix ,112 to ensure correct packaging configuration. Confirm that the specific variant matches the required pinout and thermal characteristics for the intended PCB layout. Cross-reference the manufacturer datasheet for detailed mechanical dimensions and soldering recommendations to guarantee proper integration.

Selection Notes

Select this component when designing amplifiers for the 2110 MHz to 2170 MHz band requiring 8 W output power. Ensure the bias circuit supports the 28 V operating voltage and 170 mA current requirements. Consider the CDFM4 package constraints for thermal management and RF matching network design to achieve the specified 13.3 dB gain.

Part Context

This device belongs to the BLD series of LDMOS transistors from Ampleon, targeting wireless communication infrastructure. It represents a specialized solution for linear amplification where efficiency and linearity are critical. The product line focuses on meeting the stringent demands of modern multi-carrier cellular standards.

Replacement Considerations

Public confirmed substitute part numbers: BLD6G22L-50,112.