SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF0910H6LS500U is a 500 W LDMOS power transistor designed for industrial applications at 915 MHz. It operates with a drain-source voltage of 50 V and delivers 500 W output power in continuous wave mode. The device achieves a typical drain efficiency of 61% and a gain of 18 dB at Tcase = 65 °C. It features an earless flanged ceramic package (SOT502B) with two leads. The junction temperature limit is 225 °C, and the storage temperature range spans from -65 °C to +150 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations. Ensure compliance with RoHS directives as stated in the product data sheet. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for high-power CW applications requiring robust performance in the 915 MHz frequency range. Consider the internal matching and broadband design capabilities when designing circuits for the 900 MHz to 930 MHz spectrum. Evaluate thermal constraints based on the specified operating temperatures and power dissipation levels.
This part belongs to the BLF0910H6L500 series of power LDMOS transistors manufactured by Ampleon. The LS500 variant specifically denotes the earless flanged ceramic package configuration (SOT502B), distinguishing it from the standard flanged version with mounting holes.
Consult official Ampleon documentation for verified substitute part numbers. Cross-referencing with similar series components requires careful evaluation of electrical parameters and physical package dimensions to ensure compatibility.
The maximum drain-source voltage (VDS) is rated at 114.5 V according to the absolute maximum ratings.
Yes, the BLF0910H6LS500U features integrated ESD protection and meets CDM Class 1 and HBM Class 2 sensitivity classifications.
The typical power gain (Gp) is 18 dB when operating at 500 W output power in a class-AB application circuit at 915 MHz.