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The BLF0910H9LS600 is a 600 W LDMOS power transistor designed for industrial applications at 915 MHz. It operates with a drain-source voltage of 50 V and delivers 600 W output power in continuous wave mode, achieving a typical drain efficiency of 65.7% and power gain of 18.6 dB. The device features broadband operation from 900 MHz to 930 MHz and includes integrated ESD protection. It utilizes an earless flanged ceramic package (SOT502B) with a thermal resistance of 0.174 K/W.
Verify the specific ordering information against the official Ampleon datasheet before procurement. Confirm that the required package version matches the SOT502B earless flanged ceramic specification. Ensure all handling procedures strictly adhere to the electrostatic discharge precautions outlined in the documentation to prevent component damage during installation.
Select this component for high-power continuous wave applications requiring robust performance in the 915 MHz frequency range. The internal input matching simplifies the RF circuit design process. Verify that the application environment supports the specified thermal characteristics and that the load mismatch conditions remain within the documented ruggedness limits for class-AB operation.
This part belongs to the Ampleon LDMOS power transistor family, specifically engineered for industrial radio frequency applications. It represents a high-performance solution for generating substantial output power while maintaining high efficiency. The device is distinct from automotive-qualified variants and is intended for general industrial use where high reliability and broadband capabilities are required.
Consult the official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without confirming electrical specifications and pin configurations.
The absolute maximum drain-source voltage (VDS) is rated at 106 V.
It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.
The typical thermal resistance from junction to case (Rth(j-case)) is 0.174 K/W when the case temperature is 90 °C and output power is 600 W.