BLF0910H9LS600U

BLF0910H9LS600U

$106.39
  • Description:RF MOSFET LDMOS 50V SOT502B
  • Series:-

SKU:be23d3ebfd25 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:900MHz ~ 930MHz
  • Gain:18.6dB
  • Voltage - Test:50 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:90 mA
  • Power - Output:600W
  • Voltage - Rated:108 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF0910H9LS600U

Overview

The BLF0910H9LS600 is a 600 W LDMOS power transistor designed for industrial applications at 915 MHz. It operates with a drain-source voltage of 50 V and delivers 600 W output power in continuous wave mode, achieving a typical drain efficiency of 65.7% and power gain of 18.6 dB. The device features broadband operation from 900 MHz to 930 MHz and includes integrated ESD protection. It utilizes an earless flanged ceramic package (SOT502B) with a thermal resistance of 0.174 K/W.

Feature Summary

  • High efficiency and excellent ruggedness for reliable performance
  • Designed for broadband operation across the 900 MHz to 930 MHz range
  • Internally input matched for simplified circuit design
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards

Applications

  • Industrial applications in the 915 MHz ISM band

Procurement Notes

Verify the specific ordering information against the official Ampleon datasheet before procurement. Confirm that the required package version matches the SOT502B earless flanged ceramic specification. Ensure all handling procedures strictly adhere to the electrostatic discharge precautions outlined in the documentation to prevent component damage during installation.

Selection Notes

Select this component for high-power continuous wave applications requiring robust performance in the 915 MHz frequency range. The internal input matching simplifies the RF circuit design process. Verify that the application environment supports the specified thermal characteristics and that the load mismatch conditions remain within the documented ruggedness limits for class-AB operation.

Part Context

This part belongs to the Ampleon LDMOS power transistor family, specifically engineered for industrial radio frequency applications. It represents a high-performance solution for generating substantial output power while maintaining high efficiency. The device is distinct from automotive-qualified variants and is intended for general industrial use where high reliability and broadband capabilities are required.

Replacement Considerations

Consult the official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without confirming electrical specifications and pin configurations.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 106 V.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case (Rth(j-case)) is 0.174 K/W when the case temperature is 90 °C and output power is 600 W.

BLF0910H9LS600UBLF0910H9LS600U
$106.39
Buy Now