SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon BLF1046,135 is a silicon N-channel enhancement mode lateral D-MOS (LDMOS) transistor designed for UHF broadband applications. Encapsulated in the SOT467C flange package with a ceramic cap, it features a common source connected to the mounting flange. The device operates at a drain-source voltage of 26 V and delivers 45 W of output power at 960 MHz with greater than 14 dB gain and over 35% drain efficiency. It exhibits excellent ruggedness, tolerating a VSWR of 10:1 through all phases.
Verify the component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the package type matches the SOT467C outline dimensions. Ensure the ordering suffix corresponds to the specific reel or tape configuration required for your assembly process. Cross-reference the part number with the latest product availability status from authorized channels.
Select this component for designs requiring robust RF performance in the 800 to 1000 MHz range. The device is suitable for Class-AB operation where high linearity and efficiency are critical. Consider the thermal resistance of 1.87 K/W when designing the heatsink interface. Ensure the bias circuitry supports the specified gate-source voltage limits and drain current requirements for optimal performance.
The BLF1046 belongs to the family of UHF power LDMOS transistors manufactured by Ampleon. Originally developed under Philips Semiconductors, the product line was transferred to Ampleon in December 2015. This transistor represents a mature technology optimized for broadband communication systems, offering a balance of power density and reliability for industrial and commercial radio applications.
Consult the official Ampleon portfolio for direct replacements within the BLF series. Verify pinout compatibility and thermal characteristics before substituting. No public confirmed substitute part numbers are listed in the provided documentation.