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The BLF10H6600PU is a 600 W LDMOS RF power transistor designed for transmitter and industrial applications. It operates within a broadband frequency range of 400 MHz to 1000 MHz, featuring internal input matching for high gain and optimum broadband performance. The device exhibits excellent ruggedness with VSWR tolerance exceeding 40:1 through all phases. In a narrowband test circuit at 860 MHz under class-AB conditions, it delivers an average output power of 250 W with a typical power gain of 20.8 dB and drain efficiency of 46%. Pulsed operation at the same frequency supports a peak output power of 600 W.
Verify the specific package variant required for the design, as the BLF10H6600P utilizes the SOT539A flanged balanced ceramic package with mounting holes, while the BLF10H6600PS uses the SOT539B earless flanged balanced ceramic package. Confirm that the ordering suffix accurately reflects the selected physical package configuration before finalizing procurement orders.
Select this component for designs requiring high power density and robust performance in digital and analog transmitter environments. Ensure the application circuit accommodates the specified maximum junction temperature of 225 °C and provides adequate heat sinking to maintain the case temperature within recommended limits during continuous operation.
This part belongs to the BLF10H series of power LDMOS transistors manufactured by Ampleon. The series is engineered for broadband RF power amplification, offering consistent performance across wide frequency spans. The BLF10H6600PU specifically addresses the need for high-output power in compact ceramic packages suitable for surface mount integration.
The BLF10H6600PS serves as a direct package variant replacement for the BLF10H6600P, differing only in the absence of mounting ears on the SOT539B package compared to the SOT539A.