BLF10M6200U

BLF10M6200U

$100.36
  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-

SKU:708593d4269f Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:871.5MHz ~ 891.5MHz
  • Gain:20dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.4 A
  • Power - Output:40W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLF10M6200U

Overview

The BLF10M6200 is a 200 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 700 MHz and 1000 MHz. It features an internally matched design within a flanged ceramic SOT502A package. The device operates with a drain-source voltage of 65 V and delivers 200 W output power at 881 MHz under continuous wave conditions. Typical performance metrics include a power gain of 20 dB and a drain efficiency of 28.5% when delivering 40 W average power in a 2-carrier W-CDMA test configuration.

Feature Summary

  • Internally matched for simplified circuit integration
  • Enhanced ruggedness capable of withstanding high VSWR mismatches
  • Integrated electrostatic discharge protection
  • High thermal stability and operational efficiency

Applications

  • RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific package variant required for the design, as the BLF10M6LS200 utilizes the SOT502B earless flanged package while the BLF10M6200 uses the SOT502A flanged package with mounting holes. Confirm RoHS compliance status and ensure handling procedures adhere to ESD sensitivity standards during assembly and testing.

Selection Notes

Select this component for broadband ISM applications requiring high power output up to 200 W. Ensure the thermal management system can maintain the junction temperature below 225 °C. Verify that the load impedance matches the internal matching network requirements for optimal gain and efficiency across the specified frequency band.

Part Context

This device belongs to Ampleon's Power LDMOS transistor portfolio, specifically engineered for robust RF power amplification. It shares architectural similarities with other high-power LDMOS devices but is distinctively optimized for the 700 MHz to 1000 MHz ISM spectrum with integrated matching capabilities.

Replacement Considerations

The BLF10M6LS200 serves as a functional alternative with identical electrical characteristics but utilizes the SOT502B earless flanged package instead of the SOT502A.

BLF10M6200UBLF10M6200U
$100.36
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