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The BLF10M6200 is a 200 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 700 MHz and 1000 MHz. It features an internally matched design within a flanged ceramic SOT502A package. The device operates with a drain-source voltage of 65 V and delivers 200 W output power at 881 MHz under continuous wave conditions. Typical performance metrics include a power gain of 20 dB and a drain efficiency of 28.5% when delivering 40 W average power in a 2-carrier W-CDMA test configuration.
Verify the specific package variant required for the design, as the BLF10M6LS200 utilizes the SOT502B earless flanged package while the BLF10M6200 uses the SOT502A flanged package with mounting holes. Confirm RoHS compliance status and ensure handling procedures adhere to ESD sensitivity standards during assembly and testing.
Select this component for broadband ISM applications requiring high power output up to 200 W. Ensure the thermal management system can maintain the junction temperature below 225 °C. Verify that the load impedance matches the internal matching network requirements for optimal gain and efficiency across the specified frequency band.
This device belongs to Ampleon's Power LDMOS transistor portfolio, specifically engineered for robust RF power amplification. It shares architectural similarities with other high-power LDMOS devices but is distinctively optimized for the 700 MHz to 1000 MHz ISM spectrum with integrated matching capabilities.
The BLF10M6LS200 serves as a functional alternative with identical electrical characteristics but utilizes the SOT502B earless flanged package instead of the SOT502A.