BLF13H9L750PU

Overview

The BLF13H9L750PU is a 750 W LDMOS power transistor designed for accelerator applications at 1.3 GHz. It utilizes an SOT539A flanged balanced ceramic package with two mounting holes and four leads. The device operates at a drain-source voltage of 50 V, delivering 750 W output power in pulsed mode (tp = 300 μs; δ = 10%) with 19 dB gain and 62% efficiency. In continuous wave operation, it provides 700 W output with 17 dB gain and 62.5% efficiency. The maximum junction temperature is 225 °C, and the thermal impedance from junction to case is 0.15 K/W.

Feature Summary

• High efficiency and excellent ruggedness
• Excellent thermal stability
• Easy power control
• Integrated dual-sided ESD protection for off-state isolation
• Internally matched for ease of use

Applications

• Accelerator applications at 1.3 GHz

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status via the manufacturer's website. Ensure handling procedures meet ESD sensitivity requirements, specifically CDM Class 2A and HBM Class 2 ratings.

Selection Notes

Select this component for high-power RF amplifier designs requiring robust performance at 1.3 GHz. Evaluate thermal management capabilities given the 225 °C maximum junction temperature limit. Consider the internal matching features to simplify circuit design and verify compatibility with required pulse formats.

Part Context

This part belongs to the BLF13H9 series of LDMOS transistors. The 'L' suffix indicates the SOT539A flanged package variant with mounting holes, distinct from the earless SOT539B version. It is engineered for demanding industrial and scientific environments requiring high reliability.

Replacement Considerations

The BLF13H9LS750P serves as a direct functional alternative within the same family, differing only in the earless SOT539B package configuration.