BLF13H9LS750PU

Overview

The BLF13H9LS750PU is a dual N-channel LDMOS power transistor manufactured by Ampleon USA Inc. Designed for accelerator applications at 1.3 GHz, it utilizes an earless flanged balanced ceramic package (SOT539B). The device delivers 750 W output power with 19 dB gain under pulsed RF conditions and 700 W with 17 dB gain in continuous wave operation. Key electrical parameters include a drain-source voltage of 50 V, a junction temperature limit of 225 °C, and a thermal impedance from junction to case of 0.15 K/W.

Feature Summary

• High efficiency and excellent ruggedness suitable for demanding operational environments
• Integrated dual-sided ESD protection providing excellent off-state isolation
• Internally matched design simplifies circuit integration and usage
• Excellent thermal stability supports high-power density applications

Applications

• Accelerator applications operating at 1.3 GHz

Procurement Notes

Verify the specific suffix 'U' against official documentation to confirm packaging or handling variations. Ensure compatibility with SOT539B mounting requirements. Confirm RoHS compliance status through manufacturer resources before finalizing procurement specifications.

Selection Notes

Select this component for high-power RF amplifier designs requiring robust performance at 1.3 GHz. Evaluate thermal management capabilities given the 225 °C junction temperature limit. Consider the internal matching features to reduce external component count and simplify impedance matching networks.

Part Context

This part belongs to the BLF13H9L series of power LDMOS transistors. It shares core electrical characteristics with the BLF13H9L750P but differs in physical packaging. The LS variant specifically denotes the earless flanged balanced ceramic package configuration.

Replacement Considerations

The BLF13H9L750P serves as a functional equivalent within the same family, differing primarily in package style.