BLF174XR,112

Overview

The Ampleon BLF174XR,112 is an extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 128 MHz band. It delivers a continuous wave output power of 600 W at 108 MHz with a drain efficiency of 74% and a power gain of 28.5 dB when operated at VDS = 50 V and IDq = 100 mA. The device features a maximum drain-source voltage of 110 V and a junction temperature rating of 225 °C. It utilizes a flanged ceramic package (SOT1214A) with two mounting holes and four leads.

Feature Summary

• Designed for broadband operation across the HF to 128 MHz frequency range
• Integrated electrostatic discharge (ESD) protection
• Capable of withstanding extreme load mismatches exceeding 65:1 VSWR
• Compliant with RoHS Directive 2002/95/EC

Applications

• Industrial, scientific and medical (ISM) applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm that the component meets all applicable environmental directives required for the intended deployment region before finalizing procurement orders.

Selection Notes

Select this component for high-power RF amplification requiring robust performance under severe mismatch conditions. Ensure the thermal management system can maintain the case temperature within limits to support the specified 225 °C junction temperature during continuous operation.

Part Context

This part belongs to the BLF174 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF174XRS, which differs in package style but shares identical electrical characteristics and application profiles.

Replacement Considerations

Consult official substitution lists for verified alternatives. Generic replacements may not match the specific ruggedness or impedance parameters required for high-power HF applications.