BLF174XRS,112

Overview

The BLF174XRS,112 is an extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 128 MHz band. It delivers a continuous wave output power of 600 W at 108 MHz with a drain efficiency of 74% and a power gain of 28.5 dB under standard test conditions (VDS = 50 V, IDq = 100 mA). The device features a maximum drain-source voltage of 110 V and a junction temperature limit of 225 °C. It is housed in an earless flanged ceramic package (SOT1214B) with four leads.

Feature Summary

• Capable of withstanding severe load mismatches corresponding to VSWR > 65:1 through all phases
• Integrated electrostatic discharge protection for enhanced handling reliability
• Designed for broadband operation across the HF to 128 MHz frequency range

Applications

• Industrial, scientific and medical applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Confirm current product availability as specifications may change. Ensure ESD precautions are strictly followed during handling due to component sensitivity.

Selection Notes

Select this component for high-power RF amplification requiring extreme ruggedness in the HF spectrum. Verify thermal management capabilities align with the specified junction-to-case thermal resistance. Ensure the application circuit supports the required class-AB biasing and impedance matching networks for optimal performance.

Part Context

This part belongs to the BLF174XR series of power LDMOS transistors manufactured by Ampleon USA Inc. The 'XRS' designation specifically identifies the earless flanged ceramic package variant (SOT1214B), distinguishing it from the flanged version with mounting holes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.