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The BLF177,112 is a silicon N-channel enhancement mode vertical D-MOS transistor designed for HF/VHF applications. It operates in a flanged SOT121B package with a ceramic cap and isolated leads. Key electrical parameters include a drain-source voltage of 125 V, total power dissipation of 220 W at 25 °C mounting base temperature, and a thermal resistance from junction to mounting base of 0.8 K/W. In class-AB operation at 28 MHz, it delivers up to 150 W PEP output power with greater than 20 dB gain. Class-B CW performance at 108 MHz provides 150 W output with typical efficiency of 70%.
Verify the specific ordering suffix against official Ampleon or distributor documentation to confirm exact mechanical and electrical tolerances. Ensure compatibility with the required gate-source voltage grouping for matched pair applications if utilized in balanced configurations. Confirm RoHS compliance status through current manufacturer declarations prior to final procurement decisions.
Select this component for designs requiring high power density in the HF/VHF bands. The device requires careful thermal management due to its 220 W dissipation rating and low thermal resistance. Consider the available gate-source voltage groupings when designing circuits that demand precise matching between multiple units for balanced amplifier topologies.
The BLF177 belongs to the family of silicon LDMOS/D-MOS power transistors manufactured by Ampleon (formerly NXP Semiconductors). These components are engineered specifically for high-efficiency RF power amplification in broadcast and communication systems. The product line emphasizes ruggedness and linearity for demanding industrial and military environments.
Consult official Ampleon substitution guides for verified equivalents. Generic replacements may not match the specific thermal resistance or impedance characteristics required for optimal performance in existing circuit layouts.