BLF177,112

BLF177,112

  • Description:RF MOSFET 50V CRFM4
  • Series:-

SKU:c264978f4c2b Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET 50V CRFM4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:108MHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):16A
  • Noise Figure:-
  • Current - Test:700 mA
  • Power - Output:150W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-121B
  • Supplier Device Package:CRFM4
  • Configuration:N-Channel

Download product information

BLF177,112

Overview

The BLF177,112 is a silicon N-channel enhancement mode vertical D-MOS transistor designed for HF/VHF applications. It operates in a flanged SOT121B package with a ceramic cap and isolated leads. Key electrical parameters include a drain-source voltage of 125 V, total power dissipation of 220 W at 25 °C mounting base temperature, and a thermal resistance from junction to mounting base of 0.8 K/W. In class-AB operation at 28 MHz, it delivers up to 150 W PEP output power with greater than 20 dB gain. Class-B CW performance at 108 MHz provides 150 W output with typical efficiency of 70%.

Feature Summary

  • High power gain capability suitable for RF amplification
  • Low intermodulation distortion characteristics
  • Robust thermal stability under operating conditions
  • Capable of withstanding full load mismatch

Applications

  • Industrial applications in the HF/VHF frequency range
  • Military applications in the HF/VHF frequency range
  • SSB linear amplification in radio transceivers

Procurement Notes

Verify the specific ordering suffix against official Ampleon or distributor documentation to confirm exact mechanical and electrical tolerances. Ensure compatibility with the required gate-source voltage grouping for matched pair applications if utilized in balanced configurations. Confirm RoHS compliance status through current manufacturer declarations prior to final procurement decisions.

Selection Notes

Select this component for designs requiring high power density in the HF/VHF bands. The device requires careful thermal management due to its 220 W dissipation rating and low thermal resistance. Consider the available gate-source voltage groupings when designing circuits that demand precise matching between multiple units for balanced amplifier topologies.

Part Context

The BLF177 belongs to the family of silicon LDMOS/D-MOS power transistors manufactured by Ampleon (formerly NXP Semiconductors). These components are engineered specifically for high-efficiency RF power amplification in broadcast and communication systems. The product line emphasizes ruggedness and linearity for demanding industrial and military environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Generic replacements may not match the specific thermal resistance or impedance characteristics required for optimal performance in existing circuit layouts.

BLF177,112BLF177,112

Click on the inquiry