BLF178P,112

Overview

The BLF178P,112 is a dual N-channel LDMOS power transistor designed for broadcast and industrial applications in the HF to 110 MHz band. It operates with a drain-source voltage of 50 V and delivers up to 1200 W output power at 108 MHz under pulsed conditions (tp=100 µs, duty cycle 20%). The device achieves a typical power gain of 28.5 dB and drain efficiency of 75%. Key DC parameters include a breakdown voltage of 110 V, threshold voltage of 1.7 V, and maximum drain current of 88 A. Thermal resistance from junction to case is 0.14 K/W. It utilizes a flanged balanced ceramic SOT539A package.

Feature Summary

• Designed for broadband operation across the 10 MHz to 110 MHz frequency range
• Features integrated electrostatic discharge protection and excellent ruggedness
• Provides high efficiency and thermal stability for demanding RF environments
• Supports easy power control mechanisms

Applications

• Industrial, scientific, and medical equipment
• FM transmitter systems

Procurement Notes

Verify component authenticity through official Ampleon channels or authorized distributors. Confirm that the ordering suffix matches the required packaging specifications. Ensure compliance with RoHS directives as stated in the product data sheet. Validate supply chain integrity to prevent counterfeit components. Review the latest datasheet revision for any updates to electrical characteristics or handling instructions before procurement.

Selection Notes

Select this component for applications requiring high power density in the HF to VHF bands. Ensure the design accommodates the 50 V drain supply and manages the 0.14 K/W thermal resistance effectively. Verify that the load impedance matches the simulated values for optimal performance. Consider the pulsed operation limits when designing for peak power scenarios. Evaluate the need for ESD protection measures during handling and assembly.

Part Context

The BLF178P belongs to Ampleon's portfolio of LDMOS power transistors engineered for robust RF performance. It represents a transition from previous Philips/NXP generations, maintaining compatibility with established designs while offering enhanced reliability. The device is part of a family optimized for broadcast infrastructure, providing a balance between high output power and efficient energy conversion in wideband applications.

Replacement Considerations

Check for updated revisions within the BLF178P series. Consult Ampleon documentation for direct pin-compatible alternatives if specific package variants are unavailable. Verify that any substitute maintains the same thermal and electrical ratings for the target application.

FAQ

What is the maximum load mismatch the BLF178P can withstand?

The device can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 13:1 through all phases under specified operating conditions.

How is the gate-source quiescent voltage defined?

The gate-source quiescent voltage (VGSq) is typically 1.3 V when measured with a drain-source voltage of 50 V and a quiescent drain current of 20 mA.

What is the transient thermal impedance characteristic?

The transient thermal impedance from junction to case (Zth(j-c)) is 0.04 K/W for a pulse duration of 100 µs with a 20% duty cycle at a junction temperature of 150 °C.