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The BLF178XR,112 is a 1400 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 128 MHz band. It operates with a drain-source voltage of 50 V and features a flanged balanced ceramic package (SOT539A). Typical pulsed performance at 108 MHz includes an output power of 1400 W, power gain of 28 dB, and efficiency of 72%. The device exhibits excellent thermal stability with a junction-to-case thermal resistance of 0.11 K/W and withstands load mismatches exceeding 65:1 VSWR.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm RoHS compliance status and export classification codes prior to finalizing procurement orders. Ensure handling procedures adhere to electrostatic discharge precautions as specified in the product data sheet.
Select this component for high-power RF amplification requiring robust performance in the HF spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application circuit supports the required quiescent current and supply voltage levels for optimal class-AB operation.
This part belongs to the BLF178 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF178XRS, which utilizes an earless flanged package. These devices are engineered for high reliability in continuous wave and pulsed RF modes within broadcast and industrial sectors.
Consult official substitution lists for compatible alternatives. Verify pinout compatibility and thermal characteristics when considering cross-references from other manufacturers.