BLF178XRS,112

Overview

The BLF178XRS,112 is a rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 128 MHz band. It operates with a drain-source voltage of 50 V and delivers 1400 W output power under pulsed conditions at 108 MHz. The device features a typical power gain of 28 dB and drain efficiency of 72% at a quiescent current of 40 mA. It utilizes an earless flanged balanced ceramic package (SOT539B) with four leads. Key electrical parameters include a drain-source breakdown voltage of 110 V and a thermal resistance from junction to case of 0.11 K/W.

Feature Summary

• Designed for broadband operation across the HF to 128 MHz frequency range
• Integrated electrostatic discharge protection circuitry
• Capable of withstanding severe load mismatches exceeding 65:1 VSWR
• Provides high efficiency and excellent thermal stability

Applications

• Industrial, scientific and medical equipment
• Broadcast transmitter systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm RoHS compliance status and export control classifications prior to procurement. Ensure handling procedures adhere to ESD safety standards during storage and installation.

Selection Notes

Select this component for high-power RF amplification requiring robustness against impedance mismatches. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the operating frequency falls within the HF to 128 MHz operational bandwidth.

Part Context

This part belongs to the BLF178XR series of power LDMOS transistors manufactured by Ampleon USA Inc. The XRS variant specifically denotes the earless flanged balanced ceramic package (SOT539B), distinguishing it from the standard flanged version which includes mounting holes.

Replacement Considerations

Consult the manufacturer's datasheet for direct cross-reference information. Verify pinout compatibility and thermal characteristics when considering alternative components.