BLF1820-90,112

Overview

The BLF1820-90,112 is a UHF power LDMOS transistor designed for broadband operation in the 1800 to 2000 MHz frequency range. It delivers 90 W PEP output power with a typical gain of 12 dB and efficiency of 32% at a supply voltage of 26 V and IDQ of 500 mA. The device features internal matching for ease of use, excellent ruggedness capable of withstanding a VSWR of 10:1, and high thermal stability. It utilizes an SOT502A flanged ceramic package with a junction-to-heatsink thermal resistance of 0.81 K/W.

Feature Summary

• Internally matched for simplified circuit integration
• High power gain and excellent thermal stability
• Robust performance under load mismatch conditions

Applications

• RF power amplifiers for GSM base stations
• EDGE and CDMA base station applications
• Multicarrier systems in the 1800 to 2000 MHz range

Procurement Notes

Verify the current product status as the datasheet indicates a 2003 publication date from Philips Semiconductors. Confirm availability through authorized NXP distributors, as this component may be superseded or discontinued. Ensure anti-static handling protocols are followed during transport and assembly due to ESD sensitivity.

Selection Notes

Select this component for UHF broadband applications requiring high linearity and power density. Consider the SOT502A package constraints and the need for adequate heatsinking given the 0.81 K/W thermal resistance. Evaluate biasing requirements carefully to maintain optimal efficiency and intermodulation distortion performance within the specified operating temperature range.

Part Context

This device belongs to the family of UHF power LDMOS transistors intended for base station infrastructure. It represents a solution for high-efficiency RF amplification in cellular communication bands. The technology leverages LDMOS characteristics to provide robust performance in demanding linear amplifier environments.

Replacement Considerations

Consult official documentation for direct substitutes. Potential alternatives include other NXP UHF LDMOS transistors such as the BLF188 series or similar broadband devices, provided they meet the specific electrical and mechanical requirements of the design.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 65 V.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified class-AB operating conditions.

What is the recommended thermal management approach?

The source is connected to the flange, requiring a heatsink with a thermal resistance of 0.81 K/W from junction to heatsink to maintain safe operating temperatures.