BLF182XRSU

BLF182XRSU

$109.31
  • Description:RF MOSFET LDMOS 50V SOT1121B
  • Series:-

SKU:11f82b86165c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1121B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:108MHz
  • Gain:28dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:250W
  • Voltage - Rated:135 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:SOT-1121B
  • Configuration:Dual, Common Source

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BLF182XRSU

Overview

The BLF182XRSU is a 250 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and delivers 250 W output power at 108 MHz pulsed RF, achieving 28 dB gain and 75% drain efficiency. The device features an earless flanged ceramic package (SOT-1121B) with four leads and two drains connected to the flange. It includes integrated double-sided ESD protection and exhibits excellent ruggedness, withstands VSWR > 65:1 through all phases, and complies with RoHS3 directives.

Feature Summary

  • Designed for broadband operation across the HF to 600 MHz frequency range
  • Features integrated double-sided electrostatic discharge (ESD) protection
  • Demonstrates excellent thermal stability and high efficiency
  • Capable of withstanding extreme load mismatches corresponding to VSWR greater than 65:1

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific suffix 'SU' against official Ampleon documentation to confirm it corresponds to the SOT-1121B earless flanged ceramic package variant. Ensure that procurement channels provide the original manufacturer datasheet to validate the component's RoHS3 compliance status and absolute maximum ratings before integration into production designs.

Selection Notes

Select this component for high-power RF amplification requiring robust performance in the HF spectrum. The dual-drain configuration facilitates push-pull circuit topologies. Designers must account for the 0.29 K/W junction-to-case thermal resistance and ensure adequate heat sinking to maintain the junction temperature within the specified 225 °C limit during continuous or pulsed operation.

Part Context

This part belongs to the BLF182 series of power LDMOS transistors manufactured by Ampleon. The BLF182XRU represents the flanged ceramic package variant (SOT1121A), while the BLF182XRSU utilizes the earless flanged design (SOT1121B). Both variants share identical electrical characteristics but differ in mechanical mounting requirements.

Replacement Considerations

The BLF182XR serves as the direct functional equivalent with a different mechanical package (SOT1121A). Verify that the replacement accommodates the required mounting holes and lead configuration differences between the SOT1121A and SOT1121B outlines.

BLF182XRSUBLF182XRSU
$109.31
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