BLF183XRSU

Overview

The BLF183XRSU is a 350 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 28 dB at 108 MHz pulsed RF. The device features an earless flanged ceramic package (SOT1121B) with four leads and two mounting holes. Key electrical parameters include a drain-source breakdown voltage of 135 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.25 K/W.

Feature Summary

• Designed for broadband operation across the HF to 600 MHz frequency range
• Features integrated ESD protection and excellent ruggedness
• Provides easy power control and high efficiency
• Compliant with RoHS Directive 2002/95/EC

Applications

• Industrial, scientific and medical applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant and compliance status. Ensure that the procurement channel provides valid traceability for this sensitive semiconductor component. Confirm that the received units match the specified SOT1121B outline dimensions and pin configuration before integration into the design.

Selection Notes

Select this component for designs requiring high power output in the HF to 600 MHz spectrum. Consider the 0.25 K/W thermal resistance when designing the heat sinking solution to maintain the junction temperature below 225 °C. Verify that the application circuit can handle the 135 V drain-source breakdown voltage and supports the required class-AB operating conditions for optimal performance.

Part Context

This part belongs to the BLF183XR series of power LDMOS transistors manufactured by Ampleon. The 'XRS' designation specifically indicates the earless flanged ceramic package version (SOT1121B), distinguishing it from the standard flanged variant. These devices are engineered for robust performance in demanding RF environments.

Replacement Considerations

The BLF183XR serves as the primary alternative within the same product family, utilizing the SOT1121A package. Both variants share identical electrical characteristics but differ in physical mounting configurations. Verify mechanical fit and thermal interface requirements when substituting between these package types.

FAQ

What is the maximum junction temperature for the BLF183XRSU?

The maximum junction temperature is 225 °C.

Does the BLF183XRSU include ESD protection?

Yes, the device features integrated ESD protection.

What is the typical power gain at 108 MHz?

The typical power gain is 28 dB under pulsed RF conditions at 108 MHz.