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The BLF183XRU is a 350 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and delivers up to 400 W pulsed output power at 108 MHz. The device features a maximum junction temperature of 225 °C and a thermal resistance from junction to case of 0.25 K/W. Key electrical characteristics include a typical power gain of 28 dB, a drain efficiency of 75%, and an input return loss of -10 dB under pulsed RF conditions.
Verify the specific package variant required for the design, as the BLF183XR uses SOT1121A and the BLF183XRS uses SOT1121B. Confirm that the component meets RoHS compliance standards before integration. Ensure proper ESD precautions are observed during handling and assembly to prevent damage to the sensitive gate structure.
Select this component for high-power RF amplification requiring robust load mismatch tolerance. The device supports both continuous wave and pulsed operations with varying duty cycles. Verify thermal management capabilities to maintain junction temperatures within the specified 225 °C limit during peak power delivery scenarios.
This part belongs to the BLF183XR series of power LDMOS transistors manufactured by Ampleon. The series includes variants distinguished by their physical package configurations, specifically the flanged ceramic packages SOT1121A and SOT1121B. These devices are engineered for demanding RF environments requiring high linearity and power density.
The BLF183XR serves as a direct replacement for previous NXP Semiconductors versions of the same part number. Ensure compatibility with existing mounting holes and lead configurations when substituting between the SOT1121A and SOT1121B package types.