BLF184XRU

Overview

The BLF184XRU is a 700 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and a maximum rating of 135 V. At 108 MHz, it delivers 700 W pulsed output with 23.9 dB gain and 73.5% efficiency, or 750 W continuous wave with 23.5 dB gain and 81.9% efficiency. The device features integrated ESD protection and excellent thermal stability.

Feature Summary

• Designed for broadband operation across the HF to 600 MHz frequency range
• Features integrated electrostatic discharge (ESD) protection
• Provides easy power control and high efficiency
• Demonstrates excellent ruggedness and thermal stability

Applications

• Industrial, scientific and medical applications
• Broadcast transmitter applications

Procurement Notes

Verify the exact package variant required, as the BLF184XR series includes SOT1214A (flanged ceramic with mounting holes) and SOT1214B (earless flanged ceramic). Confirm that the specific suffix matches the mechanical footprint needed for the heat sink interface. Ensure compliance with RoHS directives if applicable to the target market regulations.

Selection Notes

Select this component for high-power RF amplification requiring wide bandwidth coverage from HF through 600 MHz. The device supports class-AB operation with significant load mismatch tolerance. Consider the thermal resistance characteristics when designing the cooling solution to maintain junction temperature within safe limits during continuous wave or pulsed operation.

Part Context

This part belongs to the Ampleon BLF184 family of power LDMOS transistors. The series includes variants such as BLF184XRS, which shares similar electrical specifications but differs in the physical package outline. These devices are engineered for robust performance in demanding broadcast and industrial environments.

Replacement Considerations

BLF184XRS

FAQ

What is the maximum load mismatch the device can withstand?

The BLF184XRU can withstand a load mismatch corresponding to a VSWR greater than 65:1 through all phases under specified operating conditions.

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case is 0.18 K/W at a junction temperature of 150 °C.

Does the device include built-in protection features?

Yes, the transistor features integrated electrostatic discharge (ESD) protection.