SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF189XRA is a 1700 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 500 MHz band. It operates with a drain-source voltage of 135 V and features integrated dual-sided ESD protection. At 108 MHz, it delivers 1700 W output power with a typical gain of 26.2 dB and drain efficiency of 74%. The device utilizes a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads.
Verify the specific ordering suffix against the official Ampleon datasheet to ensure correct package configuration. The BLF189XRA corresponds to the SOT539A flanged balanced ceramic package with two mounting holes. Confirm that the required application environment aligns with the specified HF to 500 MHz operational bandwidth and power ratings before procurement.
Select this component for high-power RF amplification requiring robustness against impedance mismatches. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.11 K/W at Tj = 150 °C. Verify that the operating frequency falls within the HF to 500 MHz range and that the circuit design supports the specified 50 V drain-source voltage limit for optimal performance.
This part belongs to the Ampleon BLF189X series of power LDMOS transistors. The 'RA' suffix specifically denotes the SOT539A package variant, which includes two mounting holes. This distinguishes it from the 'RAS' variant (SOT539B), which is an earless flanged balanced ceramic package. Both variants share identical electrical characteristics but differ in mechanical mounting specifications.
The BLF189XRAS is a direct mechanical alternative within the same family, offering identical electrical performance but utilizing the SOT539B earless flanged balanced ceramic package. Designers must verify board layout compatibility regarding mounting hole placement when substituting between these package types.