BLF2043F,112

BLF2043F,112

  • Description:RF MOSFET LDMOS 26V SOT467C
  • Series:-

SKU:adb7064cd252 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V SOT467C
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.2GHz
  • Gain:11dB
  • Voltage - Test:26 V
  • Current Rating (Amps):2.2A
  • Noise Figure:-
  • Current - Test:85 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-467C
  • Supplier Device Package:SOT467C
  • Configuration:-

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BLF2043F,112

Overview

The BLF2043F is a silicon N-channel enhancement mode lateral D-MOS transistor designed for UHF broadband applications. It operates in the HF to 2.2 GHz range and is housed in a 2-lead flange package (SOT467C) with a ceramic cap. The common source connects directly to the mounting base, eliminating DC isolators. Key electrical parameters include a drain-source voltage of 65 V, a maximum drain current of 2.2 A, and a junction temperature limit of 200 °C. At 26 V and 2200 MHz in Class-AB operation, it delivers 10 W PEP output power with greater than 11 dB gain and over 30% drain efficiency.

Feature Summary

  • High power gain and excellent ruggedness suitable for demanding RF environments
  • Source connected to the mounting base reduces common mode inductance and removes the need for DC isolators
  • Capable of withstanding high load mismatch conditions up to a VSWR of 10:1

Applications

  • Communication transmitter applications in the UHF frequency range
  • Broadband amplifier circuits operating from HF up to 2.2 GHz

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details and compliance status. Ensure that the component matches the required SOT467C flange package dimensions and pin configuration before integration into the design.

Selection Notes

Select this device for UHF broadband designs requiring high power gain and robust performance under mismatched load conditions. Consider the thermal resistance characteristics and the requirement for direct mounting base connection when designing the heatsink interface and circuit layout.

Part Context

This component is part of the Ampleon UHF power LDMOS transistor family. Originally developed under Philips Semiconductors, production and branding were transferred to Ampleon in December 2015. The BLF2043F represents a legacy specification maintained for compatibility in established UHF communication systems.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-referencing with other LDMOS transistors requires careful evaluation of pinout compatibility, thermal resistance, and RF performance curves at the target operating frequency.

FAQ

What is the maximum load mismatch the BLF2043F can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under rated load power conditions.

How is the source terminal connected in the SOT467C package?

The source is connected directly to the mounting flange, which serves as the common ground reference.

What is the typical gate-source threshold voltage?

The gate-source threshold voltage is typically 5 V, measured with a drain-source voltage of 10 V and a drain current of 20 mA.

BLF2043F,112BLF2043F,112

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