BLF2324M8LS200PJ

BLF2324M8LS200PJ

$102.26
  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-

SKU:521e5e9e3cb5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:17.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.74 A
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

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BLF2324M8LS200PJ

Overview

The BLF2324M8LS200PJ is a 200 W LDMOS power transistor designed for industrial applications operating between 2300 MHz and 2400 MHz. It utilizes an earless flanged balanced ceramic package (SOT539B) with four leads. The device operates at a drain-source voltage of 28 V with a quiescent current of 1740 mA, delivering 60 W average output power. Typical performance metrics include a power gain of 17.2 dB, a drain efficiency of 32%, and an adjacent channel power ratio of -37 dBc under 1-carrier W-CDMA test conditions.

Feature Summary

  • Excellent ruggedness capable of withstanding high load mismatch
  • Low thermal resistance ensuring excellent thermal stability
  • Lower output capacitance optimized for Doherty applications
  • Internally matched for ease of circuit integration

Applications

  • RF power amplifiers for industrial applications
  • Multi-carrier applications in the 2300 MHz to 2400 MHz range

Procurement Notes

Verify the specific ordering suffix PJ against official Ampleon documentation to confirm packaging or variant details. Ensure compliance with ESD handling standards during storage and assembly. Confirm RoHS Directive 2002/95/EC compliance requirements for your manufacturing process. Validate that the SOT539B package dimensions match your PCB footprint specifications before finalizing procurement orders.

Selection Notes

Select this component for broadband operations requiring low memory effects and high pre-distortability. Consider its suitability for Doherty amplifier topologies due to reduced output capacitance. Evaluate the junction-to-case thermal resistance of 0.217 K/W for adequate heat sinking design. Ensure the application environment supports the specified maximum junction temperature limits.

Part Context

This part belongs to the BLF2324M8 series of power LDMOS transistors manufactured by Ampleon. The series targets the 2300 MHz to 2400 MHz frequency band for industrial use. The SOT539B package provides a robust, balanced ceramic structure suitable for high-power RF environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-reference electrical parameters such as breakdown voltage, gain, and thermal characteristics carefully.

BLF2324M8LS200PJBLF2324M8LS200PJ
$102.26
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