SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF2425M7L140 is a power LDMOS transistor designed for Industrial, Scientific and Medical (ISM) applications in the 2400 MHz to 2500 MHz frequency range. It delivers 140 W of continuous wave output power with a typical drain efficiency of 52% and a power gain of 18.5 dB at VDS = 28 V and IDq = 1300 mA. The device features a 65 V drain-source breakdown voltage and an integrated ESD protection circuit. It is housed in a flanged ceramic package (SOT502A) with two mounting holes.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant. The standard BLF2425M7L140 designation corresponds to the SOT502A flanged ceramic package with two mounting holes. Confirm RoHS compliance status through official Ampleon channels before finalizing procurement specifications.
Select this component for high-power CW applications requiring reliable performance within the ISM band. Ensure the thermal management system can maintain the junction temperature below 225 °C. Verify that the application circuit supports the required 28 V supply voltage and bias conditions for optimal class-AB operation.
This part belongs to the BLF2425M7 series of power LDMOS transistors from Ampleon. The series includes variants such as the BLF2425M7LS140, which utilizes an earless flanged ceramic package (SOT502B). Both versions share identical electrical characteristics but differ in mechanical mounting configurations.
The BLF2425M7LS140 serves as a direct functional substitute with identical RF performance, differing only in its earless SOT502B package configuration.