SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon BLF2425M7L250P is a 250 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It is assembled in a high-performance ceramic package (SOT539A). Typical performance at Tcase = 25 °C, VDS = 28 V, IDq = 20 mA, and f = 2450 MHz includes a power gain of 15 dB, drain efficiency of 51%, and output power of 250 W. The device features a drain-source voltage rating of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.19 K/W.
Verify the specific package variant required for the design, as the datasheet covers both flanged (BLF2425M7L250P) and earless (BLF2425M7LS250P) versions within the same document. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as regulatory requirements may vary by region and production batch date.
Select this component for high-power continuous wave applications requiring robust performance in the 2.4 GHz ISM band. Ensure the application circuit can maintain the specified case temperature and that the load impedance matches the typical values provided for optimal gain and efficiency. Verify that the system design accommodates the maximum junction temperature limits during peak operation.
This part belongs to the Ampleon BLF2425M series of LDMOS power transistors. The 'L' suffix indicates the flanged balanced ceramic package version (SOT539A), while the 'LS' variant denotes the earless version (SOT539B). Both share identical electrical characteristics but differ in mechanical mounting configurations.
The BLF2425M7LS250P serves as the direct earless package alternative to the BLF2425M7L250P. Designers must verify mechanical fitment and mounting hole alignment when substituting between the SOT539A and SOT539B packages.