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The BLF2425M7LS100 is a power LDMOS transistor designed for industrial applications operating between 2300 MHz and 2400 MHz. It delivers an average output power of 100 W with a typical drain efficiency of 33% under single-carrier W-CDMA conditions at VDS = 28 V and IDq = 900 mA. The device features a maximum drain-source voltage of 65 V, a junction-to-case thermal resistance of 0.3 K/W, and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. Packaged in the SOT502B earless flanged ceramic format, it includes integrated ESD protection and internal matching.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as indicated in the latest datasheet revision. Validate that the application environment remains within the specified absolute maximum ratings for VDS, VGS, and Tj to prevent permanent damage.
Select this component for designs requiring high ruggedness and efficiency in the 2.3 GHz to 2.4 GHz band. Ensure the thermal management system can maintain the case temperature within limits given the 0.3 K/W junction-to-case resistance. Verify compatibility with Class-AB biasing requirements and check load mismatch tolerance if VSWR conditions exceed standard levels.
This part belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for broadband and multi-carrier infrastructure. It shares design characteristics with the BLF2425M7L100 but utilizes the SOT502B earless flanged package instead of the standard flanged version. The technology supports robust operation in demanding RF environments.
BLF2425M7L100 (SOT502A package variant)