BLF2425M7LS100U

BLF2425M7LS100U

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:9ef8eff2fcdb Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:20W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLF2425M7LS100U

Overview

The BLF2425M7LS100 is a power LDMOS transistor designed for industrial applications operating between 2300 MHz and 2400 MHz. It delivers an average output power of 100 W with a typical drain efficiency of 33% under single-carrier W-CDMA conditions at VDS = 28 V and IDq = 900 mA. The device features a maximum drain-source voltage of 65 V, a junction-to-case thermal resistance of 0.3 K/W, and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. Packaged in the SOT502B earless flanged ceramic format, it includes integrated ESD protection and internal matching.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Low Rth providing excellent thermal stability
  • Designed for low memory effects providing excellent digital pre-distortion capability

Applications

  • RF power amplifiers for industrial applications in the 2300 MHz to 2400 MHz frequency range
  • Multi carrier applications in the 2300 MHz to 2400 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as indicated in the latest datasheet revision. Validate that the application environment remains within the specified absolute maximum ratings for VDS, VGS, and Tj to prevent permanent damage.

Selection Notes

Select this component for designs requiring high ruggedness and efficiency in the 2.3 GHz to 2.4 GHz band. Ensure the thermal management system can maintain the case temperature within limits given the 0.3 K/W junction-to-case resistance. Verify compatibility with Class-AB biasing requirements and check load mismatch tolerance if VSWR conditions exceed standard levels.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for broadband and multi-carrier infrastructure. It shares design characteristics with the BLF2425M7L100 but utilizes the SOT502B earless flanged package instead of the standard flanged version. The technology supports robust operation in demanding RF environments.

Replacement Considerations

BLF2425M7L100 (SOT502A package variant)

BLF2425M7LS100UBLF2425M7LS100U

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