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The BLF2425M7LS140 is a power LDMOS transistor designed for Industrial, Scientific and Medical (ISM) applications in the 2400 MHz to 2500 MHz frequency range. It delivers 140 W output power with 18.5 dB gain and 52% drain efficiency at 28 V supply voltage. The device features a 65 V drain-source breakdown voltage and operates up to a junction temperature of 225 °C. Packaged in an earless flanged ceramic SOT502B housing, it includes integrated ESD protection and internal matching for broadband operation.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS compliance requirements align with project specifications before finalizing orders.
Select the BLF2425M7LS140 for high-power CW ISM applications requiring robust performance within the 2.4 GHz band. Consider the SOT502B earless flanged package for mounting configurations where leads are preferred over mounting holes. Evaluate thermal management capabilities to maintain junction temperatures within the specified 225 °C limit during continuous operation.
This component belongs to the BLF2425M7L series of power LDMOS transistors manufactured by Ampleon. The 'S' suffix denotes the earless flanged ceramic package version (SOT502B), distinct from the standard flanged version with mounting holes. Both variants share identical electrical characteristics and are optimized for similar high-power RF applications.
The BLF2425M7L140 serves as the primary alternative within the same product family, differing only in its SOT502A flanged package configuration which includes two mounting holes instead of leads.