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The BLF2425M8L140J is a 140 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It operates with a drain-source voltage of 65 V maximum and delivers 140 W output power at 2450 MHz with 56% drain efficiency and 19 dB gain. The device features an integrated ESD protection circuit and excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases. It utilizes a flanged ceramic package (SOT502A) with two mounting holes and two leads.
Verify the specific ordering suffix 'J' against official Ampleon documentation to confirm packaging or variant details, as standard datasheets list 'BLF2425M8L140'. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the component status remains active and check for any recent revision history updates before finalizing orders.
Select this component for high-power CW applications requiring robust performance in the 2.4 GHz ISM band. The SOT502A flanged package facilitates efficient heat dissipation via direct mounting. Designers must account for the 0.28 K/W junction-to-case thermal resistance and ensure proper PCB layout using Rogers 4350B material for optimal impedance matching and thermal management.
This part belongs to the BLF2425M8 series of power LDMOS transistors manufactured by Ampleon. The series includes variants such as the BLF2425M8LS140, which differs primarily in package configuration (earless vs. flanged). These devices are engineered specifically for demanding RF power amplifier applications where high linearity and reliability are critical.
The BLF2425M8LS140 serves as a functional alternative within the same family, offering identical electrical specifications but utilizing an earless flanged ceramic package (SOT502B) instead of the flanged version with mounting holes.