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The BLF2425M8LS140J is a power LDMOS transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It delivers 140 W output power with 19 dB gain and 56% drain efficiency at 28 V. The device features a maximum drain-source voltage of 65 V, junction temperature up to 225 °C, and thermal resistance of 0.28 K/W. Packaged in the SOT502B earless flanged ceramic format, it includes integrated ESD protection and internal matching.
Verify the specific 'J' suffix against official Ampleon documentation to confirm its exact meaning regarding packaging or testing variations. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the SOT502B package variant matches the required mechanical constraints for the target assembly process.
Select this component for high-power continuous wave applications requiring robust performance within the 2.4 GHz ISM band. Evaluate the 0.28 K/W thermal resistance to ensure adequate heat sinking capabilities are available. Consider the 65 V drain-source breakdown voltage when designing bias circuits and load-pull networks for optimal class-AB operation.
This part belongs to the BLF2425M8L series of power LDMOS transistors manufactured by Ampleon. It shares core electrical specifications with the BLF2425M8L140 but utilizes the SOT502B earless flanged ceramic package instead of the standard flanged version. Both variants are optimized for CW operations in industrial and scientific equipment.
The BLF2425M8L140 serves as a direct functional substitute, differing primarily in the inclusion of mounting ears on the SOT502A package versus the earless SOT502B design.