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The BLF2425M9L30J is a 30 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It utilizes an SOT1135A flanged ceramic package with two mounting holes and two leads. At a drain-source voltage of 32 V and quiescent current of 20 mA, the device delivers 30 W output power with 18.5 dB gain and 61% drain efficiency at 2450 MHz. The drain-source breakdown voltage is rated at 65 V, while the junction temperature limit reaches 225 °C. Thermal resistance from junction to case is typically 0.9 K/W under specified conditions.
Verify the specific ordering suffix 'J' against official Ampleon documentation, as the primary datasheet references 'BLF2425M9L30'. Confirm that the component matches the SOT1135A flanged ceramic package specification. Ensure compliance with ESD handling standards during procurement and storage to maintain device integrity.
Select this component for broadband CW applications requiring robust performance within the ISM band. Verify thermal management requirements given the 0.9 K/W junction-to-case resistance. Ensure the design accommodates the 65 V drain-source voltage limit and operates within the specified class-AB bias conditions for optimal efficiency.
This device belongs to the BLF2425M9L series of power LDMOS transistors manufactured by Ampleon. It shares core electrical characteristics with the BLF2425M9LS30 variant, differing primarily in the physical package configuration. The SOT1135A outline defines the mechanical interface for mounting and lead connection.
The BLF2425M9LS30 serves as a functional alternative with identical electrical specifications but utilizes the SOT1135B earless flanged ceramic package. Verify mechanical compatibility before substitution.
The BLF2425M9L30 can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 10:1 through all phases.
Pin 2 is designated as the gate terminal in the SOT1135A package configuration.
The typical drain leakage current (IDSS) is 1.4 µA when measured at VGS = 0 V and VDS = 32 V.