BLF2425M9L30J

BLF2425M9L30J

$110.25
  • Description:RF MOSFET LDMOS 32V CDFM2
  • Series:-

SKU:ecf04a261336 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.45GHz
  • Gain:18.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:20 mA
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1135A
  • Supplier Device Package:CDFM2
  • Configuration:-

Download product information

BLF2425M9L30J

Overview

The BLF2425M9L30J is a 30 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It utilizes an SOT1135A flanged ceramic package with two mounting holes and two leads. At a drain-source voltage of 32 V and quiescent current of 20 mA, the device delivers 30 W output power with 18.5 dB gain and 61% drain efficiency at 2450 MHz. The drain-source breakdown voltage is rated at 65 V, while the junction temperature limit reaches 225 °C. Thermal resistance from junction to case is typically 0.9 K/W under specified conditions.

Feature Summary

  • High efficiency and high power gain capabilities
  • Excellent ruggedness against load mismatch
  • Integrated ElectroStatic Discharge (ESD) protection

Applications

  • Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz

Procurement Notes

Verify the specific ordering suffix 'J' against official Ampleon documentation, as the primary datasheet references 'BLF2425M9L30'. Confirm that the component matches the SOT1135A flanged ceramic package specification. Ensure compliance with ESD handling standards during procurement and storage to maintain device integrity.

Selection Notes

Select this component for broadband CW applications requiring robust performance within the ISM band. Verify thermal management requirements given the 0.9 K/W junction-to-case resistance. Ensure the design accommodates the 65 V drain-source voltage limit and operates within the specified class-AB bias conditions for optimal efficiency.

Part Context

This device belongs to the BLF2425M9L series of power LDMOS transistors manufactured by Ampleon. It shares core electrical characteristics with the BLF2425M9LS30 variant, differing primarily in the physical package configuration. The SOT1135A outline defines the mechanical interface for mounting and lead connection.

Replacement Considerations

The BLF2425M9LS30 serves as a functional alternative with identical electrical specifications but utilizes the SOT1135B earless flanged ceramic package. Verify mechanical compatibility before substitution.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF2425M9L30 can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 10:1 through all phases.

How is the gate connected in the pinning configuration?

Pin 2 is designated as the gate terminal in the SOT1135A package configuration.

What is the typical drain leakage current?

The typical drain leakage current (IDSS) is 1.4 µA when measured at VGS = 0 V and VDS = 32 V.

BLF2425M9L30JBLF2425M9L30J
$110.25
Buy Now