BLF2425M9L30U

Overview

The BLF2425M9L30U is a 30 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It utilizes a flanged ceramic package (SOT1135A) with two mounting holes and two leads. The device provides a typical power gain of 18.5 dB and drain efficiency of 61% at 2450 MHz under Class-AB conditions (VDS = 32 V, IDq = 20 mA). Key electrical parameters include a drain-source breakdown voltage of 65 V, a maximum junction temperature of 225 °C, and a thermal resistance from junction to case of 0.9 K/W.

Feature Summary

• High efficiency and high power gain capabilities
• Excellent ruggedness against load mismatches up to VSWR 10:1
• Integrated ElectroStatic Discharge (ESD) protection

Applications

• Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'L' suffix indicates a flanged ceramic package with two mounting holes (SOT1135A), whereas the 'LS' variant denotes an earless version (SOT1135B). Confirm that the component matches the required mechanical footprint and lead configuration for the intended circuit board design before finalizing orders.

Selection Notes

Select this component for broadband CW driver applications requiring robust performance within the 2.4 GHz ISM band. Ensure the design accommodates the flanged ceramic SOT1135A package and provides adequate heatsinking to manage the thermal resistance of 0.9 K/W. Verify that the application environment does not exceed the absolute maximum ratings, particularly the 225 °C junction temperature limit.

Part Context

This part belongs to the BLF2425 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF2425M9LS30, which shares similar electrical characteristics but differs in physical packaging. The BLF2425M9L30U specifically refers to the standard flanged version intended for high-power continuous wave operations.

Replacement Considerations

The BLF2425M9LS30 serves as a direct functional substitute if the earless SOT1135B package is acceptable. Other members of the BLF2425 family may offer different power levels or frequencies and require careful evaluation of pinout and thermal specifications before substitution.

FAQ

What is the maximum Voltage Standing-Wave Ratio (VSWR) the device can withstand?

The BLF2425M9L30U can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified Class-AB operating conditions.

How is the gate connected in the SOT1135A package?

In the SOT1135A package, Pin 2 is the gate connection.

What is the ESD sensitivity classification for this component?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.