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The BLF2425M9LS30U is a 30 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It operates with a drain-source voltage of 32 V and delivers 30 W output power with 18.5 dB gain and 61% drain efficiency. The device features a 65 V breakdown voltage, 225 °C maximum junction temperature, and 0.9 K/W thermal resistance. It utilizes an earless flanged ceramic package (SOT1135B) with integrated ESD protection.
Verify the specific ordering suffix against official Ampleon documentation before procurement. Confirm that the 'LS' designation corresponds to the SOT1135B earless flanged ceramic package variant rather than the standard flanged version. Ensure compliance with RoHS requirements as specified in the product details on the manufacturer website.
Select this component for high-power continuous wave applications requiring robust performance in the ISM band. Evaluate the thermal management strategy to maintain case temperatures within limits, considering the 0.9 K/W junction-to-case thermal resistance. Verify impedance matching networks using the provided typical load-pull data for optimal power transfer at 2400 MHz to 2500 MHz.
This part belongs to the BLF2425 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF2425M9L30, which differs in package configuration. These devices are engineered for drivers in high-power CW applications, utilizing advanced LDMOS technology housed in high-performance ceramic packages suitable for demanding RF environments.
The BLF2425M9L30 is a related model within the same family but utilizes the SOT1135A flanged ceramic package with mounting holes instead of the SOT1135B earless design. Electrical characteristics remain comparable, but mechanical integration requires verification of mounting hole compatibility and lead configurations.