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The BLF244,112 is a silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. Encapsulated in a 4-lead SOT123A flange package with a ceramic cap, it features gold metallization for reliability and isolated leads. Key electrical parameters include a drain-source breakdown voltage of 65 V, a maximum DC drain current of 3 A, and a total power dissipation of 38 W at 25 °C mounting base temperature. In CW Class-B operation at 175 MHz with VDS = 28 V, it delivers 15 W output power with greater than 13 dB gain and over 50% drain efficiency.
Verify component authenticity through authorized Ampleon distributors or official sales channels. Confirm RoHS compliance status and check for specific matched gate-source voltage groups if required by design specifications. Ensure handling procedures account for beryllium oxide content within the ceramic package to meet environmental safety regulations.
Select this device for VHF band designs requiring high linearity and ruggedness against load mismatches. Consider the SOT123A flange package for effective heat sinking capabilities. Evaluate thermal resistance values and derating curves to ensure junction temperatures remain within the 200 °C limit under expected operating conditions and duty cycles.
Originally developed by Philips Semiconductors, this part was transferred to Ampleon following the spin-off of RF Power activities in December 2015. The BLF244 belongs to the legacy VHF power MOS transistor portfolio, representing established silicon technology optimized for broadband VHF applications before the widespread adoption of newer LDMOS and GaN platforms.
Direct cross-references are not explicitly listed in the datasheet. Designers should evaluate newer Ampleon VHF devices such as the BLF series variants or consult manufacturer application notes for updated alternatives offering improved performance metrics or enhanced packaging options.