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The BLF245B is a VHF push-pull power MOS transistor manufactured by Ampleon. It is a dual silicon N-channel enhancement mode vertical D-MOS device designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279A balanced flange package with a ceramic cap and features gold metallization for excellent reliability. In Class-B operation at 175 MHz with a drain-source voltage of 28 V, it delivers an output power of 30 W, a power gain exceeding 14 dB, and a drain efficiency greater than 55%.
Verify the specific ordering suffix against official documentation to confirm exact specifications. Ensure compliance with safety precautions regarding beryllium oxide content during handling and disposal. Confirm current product status and availability directly with authorized distributors or the manufacturer before initiating procurement processes.
Select this component for VHF applications requiring high power gain and easy power control. Consider the SOT279A package dimensions and thermal resistance characteristics when designing heatsinking solutions. Verify gate-source threshold voltage group requirements for precise biasing in Class-B operation.
The BLF245B is part of Ampleon's portfolio of RF power transistors. Originally developed under Philips Semiconductors, the brand transitioned to Ampleon in December 2015. This device represents a specialized solution for VHF band amplification, leveraging vertical D-MOS technology for high efficiency and ruggedness in demanding radio frequency environments.
No verified public substitute part numbers are available in the provided documentation.