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The BLF248,112 is a VHF push-pull power MOS transistor manufactured by Ampleon USA Inc. It is a dual silicon N-channel enhancement mode vertical D-MOS device designed for large signal amplifier applications in the VHF frequency range. The component utilizes gold metallization for reliability and is housed in a 4-lead SOT262 A1 balanced flange package with two ceramic caps. In class-AB operation at 225 MHz with a 28 V supply, it delivers 300 W of output power with greater than 10 dB gain and over 55% drain efficiency.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and binning. Confirm RoHS compliance status as specifications may evolve. Check for any Customer Product/Process Change Notifications (CPCN) that might affect pinout or electrical characteristics before finalizing procurement.
Select this component for VHF applications requiring high power density and push-pull topology. Ensure the design accommodates the SOT262 A1 flange mount for proper heat dissipation. Verify that the gate-source voltage limits and drain current ratings are not exceeded under mismatched load conditions to maintain device ruggedness.
The BLF248 belongs to the Ampleon VHF power transistor family, originally developed under Philips Semiconductors. It represents a transition period where NXP RF Power became an independent entity named Ampleon. This part is specifically engineered for robust performance in high-power VHF environments compared to lower-frequency counterparts.
Direct replacements must match the SOT262A1 flange package and dual push-pull architecture. Verify that substitute devices offer comparable thermal resistance and breakdown voltage ratings. Cross-reference with other Ampleon VHF series parts if pin compatibility is critical.