BLF25M612,112

Overview

The BLF25M612,112 is a 12 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It operates with a drain-source voltage of 28 V and delivers 12 W output power with 19 dB gain and 60% drain efficiency. The device features a 65 V breakdown voltage, 1.9 V typical threshold voltage, and 4.0 K/W thermal resistance. It is housed in an earless flanged ceramic SOT975B package.

Feature Summary

• High efficiency and high power gain
• Excellent ruggedness and thermal stability
• Integrated ESD protection

Applications

• Industrial, scientific and medical applications in the frequency range 2400 MHz to 2500 MHz

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package variant selection. Confirm RoHS compliance status and check for any recent product status updates or datasheet revisions prior to finalizing procurement orders.

Selection Notes

Select this component for broadband ISM operations requiring high power gain and excellent ruggedness. Ensure the design accommodates the specified 65 V drain-source voltage limit and utilizes appropriate thermal management given the 4.0 K/W junction-to-case thermal resistance.

Part Context

This part belongs to the BLF25M612 series, which includes the BLF25M612G variant. Both are drivers designed for high power CW applications and are assembled in high-performance ceramic packages suitable for demanding RF environments.

Replacement Considerations

The BLF25M612G is a related variant within the same series. Verify pinout compatibility and package dimensions before substitution.