BLF25M612,118

Overview

The BLF25M612,118 is a 12 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications in the 2400 MHz to 2500 MHz frequency range. It operates as a driver for high-power continuous wave (CW) signals within an earless flanged ceramic package (SOT975B). The device features a drain-source voltage rating of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 4.0 K/W. At 2450 MHz with a 28 V supply, it delivers 12 W output power with a typical gain of 19 dB and drain efficiency of 60%.

Feature Summary

• High efficiency and high power gain capabilities
• Excellent ruggedness against load mismatches up to 10:1 VSWR
• Integrated ElectroStatic Discharge (ESD) protection
• Designed for broadband operation across the ISM band

Applications

• Industrial, scientific and medical applications at 2400 MHz to 2500 MHz
• Solid state cooking equipment drivers
• High power CW signal generation circuits

Procurement Notes

Verify the specific ordering suffix and package variant when sourcing components. Confirm that the received units match the SOT975B outline dimensions and pin configuration detailed in the official datasheet. Ensure compliance with handling precautions for electrostatic sensitive devices during storage and assembly processes.

Selection Notes

Select this component for designs requiring a 12 W output stage in the 2.4 GHz ISM band. Evaluate the thermal management requirements based on the 4.0 K/W junction-to-case resistance. Ensure the circuit design supports class-AB operation with appropriate biasing for the specified 28 V drain voltage and 10 mA quiescent current conditions.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors utilizing Laterally Diffused Metal-Oxide Semiconductor technology. It serves as a specialized driver stage for high-power applications, distinct from lower-power logic or general-purpose switching MOSFETs. The product line focuses on robust performance in demanding industrial environments.

Replacement Considerations

The BLF25M612G is the RoHS-compliant version of this component. Both variants share identical electrical specifications and pin configurations but differ in their environmental compliance status. Verify regulatory requirements before substituting between these two part numbers.

FAQ

What is the maximum Voltage Standing-Wave Ratio (VSWR) the device can withstand?

The BLF25M612 is capable of withstanding a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

How does the gate-source threshold voltage vary?

The gate-source threshold voltage typically ranges from 1.4 V to 2.4 V, measured at a drain-source voltage of 10 V and a drain current of 18 mA.

Is this component suitable for automotive applications?

No, unless explicitly stated otherwise, this product is not automotive qualified. It has not been tested according to automotive standards and should not be used in life-critical systems.