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The BLF3G21-6 is a 6 W LDMOS power transistor designed for base station applications across the HF to 2200 MHz frequency range. It operates with a drain-source voltage of 65 V and features excellent back-off linearity, high power gain, and ruggedness. Typical Class-AB performance at 2000 MHz includes 7 W output power, 12.5 dB gain, and 43% efficiency. In PHS mode at 1900 MHz, it delivers 2 W average output power with 16 dB gain and -75 dBc ACPR. The device utilizes a ceramic surface-mounted SOT538A package.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and manufacturing lot details. Confirm current product status as legacy or active components may have supply chain variations. Cross-reference datasheet revision history to validate technical specifications before integration into final designs.
Select this component for wideband UHF applications requiring robust load mismatch tolerance. Ensure thermal management supports junction temperatures up to 200 °C. Verify that the required operating frequency falls within the specified HF to 2200 MHz range for optimal gain and efficiency characteristics.
This part belongs to the BLF3G21 series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. The series targets general-purpose broadband RF power amplifier designs. The BLF3G21-6 specifically offers lower power handling compared to higher-wattage variants while maintaining broad frequency coverage suitable for various communication standards.
Consult official Ampleon substitution guides for direct replacements. Verify pinout compatibility and thermal resistance values when considering alternative packages. Ensure equivalent breakdown voltages and maximum current ratings are met by any substitute component.