BLF3G22-30,112

Overview

The BLF3G22-30 is a UHF power LDMOS transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It delivers 30 W output power with a typical gain of 14 dB and drain efficiency of 33% under two-tone CW conditions at 28 V supply voltage. The device features an internally matched design, ESD protection, and operates within a junction temperature limit of 200 °C. It utilizes a flanged ceramic SOT608A package with a thermal resistance from junction to case of 1.85 K/W.

Feature Summary

• Internally matched for ease of use
• ESD protection included
• Excellent back off linearity
• High power gain

Applications

• RF power amplifiers for W-CDMA base stations
• Multicarrier applications in the 2000 MHz to 2200 MHz range
• Broadcast drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation before procurement. Confirm that the component meets all required environmental standards and export control classifications applicable to your region. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity during transport and installation.

Selection Notes

Select this component for designs requiring high ruggedness and excellent linearity in Class-AB operation. Verify that the application board can maintain the specified thermal conditions, as performance metrics depend on a case temperature of 25 °C. Ensure the load impedance matches the internal matching network specifications for optimal efficiency and gain across the target frequency band.

Part Context

This device belongs to Ampleon's portfolio of UHF power LDMOS transistors engineered for wireless infrastructure. It is specifically optimized for multicarrier modulation schemes like W-CDMA, offering superior intermodulation distortion performance compared to standard linear devices. The technology supports robust operation under varying load mismatch conditions.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent part numbers. Do not assume functional compatibility with other LDMOS families without verifying pinout, internal matching networks, and thermal characteristics against the original datasheet requirements.