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The BLF3G22-30 is a UHF power LDMOS transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It delivers 30 W output power with a typical gain of 14 dB and drain efficiency of 33% under two-tone CW conditions at 28 V supply voltage. The device features internal matching, ESD protection, and excellent ruggedness capable of withstanding a VSWR of 10:1. It operates within a junction temperature limit of 200 °C and utilizes an SOT608A flanged ceramic package.
Verify the specific ordering suffix against current Ampleon documentation to confirm package version and compliance status. Confirm product availability as specifications may change. Ensure handling procedures account for electrostatic discharge sensitivity during transport and installation.
Select this component for broadband operations between 2000 MHz and 2200 MHz requiring high power gain and thermal stability. Evaluate the 28 V supply requirement and 450 mA quiescent current for biasing circuits. Consider the SOT608A package dimensions for mechanical integration and thermal management strategies.
This part belongs to the BLF series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. It is specifically engineered for wireless infrastructure, offering a balance of high output power and linearity required for modern cellular standards.
Consult official Ampleon substitution guides for verified replacements. Cross-reference pinout compatibility and thermal resistance values when considering alternative packages or newer generation devices.
The BLF3G22-30 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified Class-AB operating conditions.
The typical supply voltage (VDS) for operation is 28 V, with a maximum limiting value of 65 V.
Yes, the BLF3G22-30 is internally matched to facilitate ease of use in amplifier designs.