BLF4G20LS-130,112

Overview

The BLF4G20LS-130 is a 130 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 28 V and features internal matching for ease of use. In GSM EDGE mode at 1990 MHz, it delivers 60 W average output power with 36% efficiency and -62 dBc ACPR400. Continuous wave operation supports up to 130 W output power with 50% drain efficiency.

Feature Summary

• Internally matched for simplified circuit integration
• High ruggedness capable of withstanding high VSWR conditions
• Excellent thermal stability and high efficiency
• Designed for broadband operation across specified UHF bands

Applications

• RF power amplifiers for GSM base stations
• RF power amplifiers for GSM EDGE base stations
• RF power amplifiers for CDMA base stations
• Multi-carrier applications in the 1800 MHz to 2000 MHz range

Procurement Notes

Verify the specific ordering suffix against current NXP documentation to confirm package version and compliance status. Ensure ESD precautions are strictly followed during handling due to device sensitivity. Confirm that the application environment remains within the absolute maximum ratings for junction temperature and voltage limits to prevent permanent damage.

Selection Notes

Select this component for UHF base station designs requiring high linearity and power output in the 1800-2000 MHz band. The internal matching network reduces design complexity compared to unmatched devices. Consider the SOT502B ceramic package for its thermal performance and robust construction suitable for high-power RF environments.

Part Context

This device belongs to NXP's UHF power LDMOST transistor family. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology optimized for linear amplification. The earless flanged ceramic package facilitates efficient heat dissipation from the drain to the mounting surface, supporting continuous high-power operations in telecommunications infrastructure.

Replacement Considerations

Consult official NXP substitution guides for verified alternatives. No public substitute part numbers are confirmed in the provided datasheet.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF4G20LS-130 can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under Class-AB operating conditions.

How is the gate pin configured in the SOT502B package?

Pin 2 is designated as the gate connection in the simplified outline for the SOT502B package.

What is the typical thermal resistance from junction to case?

The typical thermal resistance (Rth(j-case)) is 0.49 K/W when measured at Tcase = 80 °C and PL = 50 W.