BLF544,112

BLF544,112

  • Description:RF MOSFET 28V CDFM6
  • Series:-

SKU:d4909ffc47aa Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:960MHz
  • Gain:7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):3.5A
  • Noise Figure:-
  • Current - Test:40 mA
  • Power - Output:20W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-171A
  • Supplier Device Package:CDFM6
  • Configuration:N-Channel

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BLF544,112

Overview

The BLF544,112 is an N-channel enhancement mode vertical D-MOS power transistor designed for UHF broadband applications. Encapsulated in a 6-lead SOT171A flange package with a ceramic cap, it features gold metallization for reliability and isolated leads. The device operates within the 0.5 GHz to 1.4 GHz range, delivering 20 W output power at 500 MHz and 960 MHz under Class-B conditions with a 28 V drain-source voltage. It exhibits high power gain exceeding 11 dB at lower frequencies and maintains good thermal stability with a junction-to-mounting base thermal resistance of 3.7 K/W.

Feature Summary

  • High power gain suitable for broadband operation across the UHF spectrum
  • Gold metallization ensures excellent long-term reliability
  • Good thermal stability with robust mismatch handling capabilities
  • Marking code provided for gate-source voltage matching in paired applications

Applications

  • Communication transmitters in the UHF frequency range
  • Broadband RF power amplification circuits
  • Class-B linear amplifier stages

Procurement Notes

Verify the component status as production data before design finalization. Confirm that the specific ordering suffix matches the required packaging or binning specifications. Ensure compatibility with the SOT171A footprint dimensions during PCB layout. Check for RoHS compliance documentation if required by local regulations. Validate the presence of beryllium oxide safety warnings for proper handling procedures.

Selection Notes

Select this transistor for designs requiring high gain and ruggedness in the UHF band. Consider the 28 V operating voltage and 3.5 A maximum drain current limits. Evaluate the thermal management requirements based on the 48 W total power dissipation rating. Ensure the application circuit can handle the specified VSWR mismatch conditions without damage.

Part Context

Originally developed by Philips Semiconductors, this part is now manufactured and supported by Ampleon following the spin-off of the RF Power division in December 2015. The datasheet retains historical Philips references but directs users to Ampleon for current support and contact details. It belongs to the family of UHF power MOS transistors optimized for communication transmitter applications.

Replacement Considerations

No direct public substitute part numbers are documented in the source material. Designers should consult official Ampleon resources for updated equivalent devices or next-generation replacements compatible with the SOT171A package.

BLF544,112BLF544,112

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