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The BLF548,112 is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for UHF communications transmitter applications. It operates in the SOT262A2 balanced flange package with two ceramic caps and a mounting flange serving as the common source connection. In Class-B operation at 500 MHz with VDS of 28 V, it delivers 150 W output power with greater than 10 dB gain and over 50% drain efficiency. The device features gold metallization for reliability and includes limiting values such as a 65 V drain-source voltage and 330 W total power dissipation.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure compatibility with the SOT262A2 flange package dimensions during mechanical integration. Confirm RoHS compliance status through current manufacturer notices. Check for any Customer Product/Process Change Notifications that may affect pinout or electrical characteristics prior to final design approval.
Select this component for high-power UHF applications requiring push-pull topology. Verify thermal management capabilities given the 0.5 K/W junction-to-mounting base resistance. Ensure the bias circuit supports the specified gate-source threshold voltage groups. Confirm load impedance matches the required ZL for optimal efficiency at the target operating frequency.
The BLF548 belongs to the family of UHF power MOS transistors originally developed by Philips Semiconductors. Following the corporate restructuring on December 7, 2015, the BL RF Power division became an independent company named Ampleon. The product specification remains valid under the Ampleon brand, maintaining the original technical parameters and performance characteristics defined in the legacy documentation.
No public confirmed substitute part numbers are available in the provided documentation.