BLF573,112

BLF573,112

$152.07
  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-

SKU:b2e2ec8541d4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:225MHz
  • Gain:27.2dB
  • Voltage - Test:50 V
  • Current Rating (Amps):42A
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:300W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLF573,112

Overview

The BLF573,112 is a 300 W LDMOS RF power transistor designed for broadcast and industrial applications within the HF to 500 MHz band. It operates with a drain-source voltage of 110 V maximum and delivers 300 W output power at 225 MHz with 70% efficiency. The device features integrated ESD protection and excellent thermal stability. It is housed in a flanged ceramic SOT502A package with two mounting holes and two leads.

Feature Summary

  • Designed for broadband operation across the HF and VHF bands
  • Integrated electrostatic discharge (ESD) protection
  • Excellent ruggedness capable of withstanding high VSWR mismatches
  • High efficiency and excellent thermal stability

Applications

  • Industrial, scientific and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm package variant availability. Confirm RoHS compliance status as per the latest datasheet revision. Ensure proper ESD handling protocols are followed during transport and assembly due to the device's sensitivity to electrostatic discharge.

Selection Notes

Select the BLF573 variant when a flanged ceramic package with two mounting holes is required for mechanical stability. Consider the BLF573S earless version if the application design accommodates its specific mounting configuration. Ensure the operating frequency remains within the specified HF to 500 MHz range for optimal performance.

Part Context

This component belongs to the Ampleon BLF573 series of LDMOS transistors. The series includes variants like the BLF573S, which differs primarily in the physical package structure. These devices are engineered for robust performance in high-power RF environments requiring reliable operation in broadcast and ISM sectors.

Replacement Considerations

Public confirmed substitute part numbers: BLF573S

FAQ

What is the maximum load mismatch the BLF573 can withstand?

The device can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 13:1 through all phases under specified Class-AB operating conditions.

How does the BLF573 package differ from the BLF573S?

The BLF573 uses the SOT502A package, which is a flanged ceramic package with two mounting holes and two leads. The BLF573S uses the SOT502B package, which is an earless flanged ceramic package with two leads.

What is the typical power gain at 225 MHz?

At a frequency of 225 MHz, with a supply voltage of 50 V and a quiescent drain current of 900 mA, the typical power gain is 27.2 dB.

BLF573,112BLF573,112
$152.07
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