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The BLF573,112 is a 300 W LDMOS RF power transistor designed for broadcast and industrial applications within the HF to 500 MHz band. It operates with a drain-source voltage of 110 V maximum and delivers 300 W output power at 225 MHz with 70% efficiency. The device features integrated ESD protection and excellent thermal stability. It is housed in a flanged ceramic SOT502A package with two mounting holes and two leads.
Verify the specific ordering suffix against the manufacturer's current catalog to confirm package variant availability. Confirm RoHS compliance status as per the latest datasheet revision. Ensure proper ESD handling protocols are followed during transport and assembly due to the device's sensitivity to electrostatic discharge.
Select the BLF573 variant when a flanged ceramic package with two mounting holes is required for mechanical stability. Consider the BLF573S earless version if the application design accommodates its specific mounting configuration. Ensure the operating frequency remains within the specified HF to 500 MHz range for optimal performance.
This component belongs to the Ampleon BLF573 series of LDMOS transistors. The series includes variants like the BLF573S, which differs primarily in the physical package structure. These devices are engineered for robust performance in high-power RF environments requiring reliable operation in broadcast and ISM sectors.
Public confirmed substitute part numbers: BLF573S
The device can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 13:1 through all phases under specified Class-AB operating conditions.
The BLF573 uses the SOT502A package, which is a flanged ceramic package with two mounting holes and two leads. The BLF573S uses the SOT502B package, which is an earless flanged ceramic package with two leads.
At a frequency of 225 MHz, with a supply voltage of 50 V and a quiescent drain current of 900 mA, the typical power gain is 27.2 dB.