BLF574,112

Overview

The BLF574,112 is a 500 W to 600 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 500 MHz band. It operates with a drain-source voltage of 110 V maximum and features a junction temperature rating up to 225 °C. At 225 MHz with a 50 V supply and 1000 mA quiescent current, it delivers 500 W output power with 26.5 dB gain and 70% efficiency. The device utilizes a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads.

Feature Summary

• Designed for broadband operation across the 10 MHz to 500 MHz frequency range
• Integrated electrostatic discharge protection for enhanced handling safety
• Excellent thermal stability and ruggedness under high load mismatch conditions
• Compliant with RoHS Directive 2002/95/EC regarding hazardous substances

Applications

• Industrial, scientific and medical applications
• Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and compliance status. Ensure that the procurement channel provides valid product data sheets matching the SOT539A package outline. Confirm that the component meets the required environmental standards before finalizing acquisition.

Selection Notes

Select this component for high-power RF amplification within the HF and VHF spectrum. Ensure the application circuit supports the specified 50 V drain-source voltage and manages the thermal resistance from junction to case effectively. Verify impedance matching networks align with the typical source and load impedances provided in the test data.

Part Context

This part belongs to the BLF series of LDMOS power transistors manufactured by Ampleon. It is specifically engineered for robust performance in demanding RF environments. The device represents a mature technology optimized for linear amplification tasks requiring high power density and wide bandwidth capabilities.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-referencing requires matching package type, electrical ratings, and thermal characteristics to ensure functional compatibility without redesigning the host system.

FAQ

What is the maximum load mismatch the BLF574 can withstand?

The device can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 13:1 through all phases under specified Class-AB operating conditions.

How is the gate connected in the pinning configuration?

The device features dual gates, designated as Gate 1 and Gate 2, which are typically connected together in application circuits to drive the transistor.

What is the ESD sensitivity classification for this component?

The BLF574 has a Human Body Model (HBM) ESD sensitivity classification of Class 2, indicating it passes at 2000 V but fails at 4000 V.