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The BLF578XR,112 is a 1400 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 500 MHz band. It utilizes Ampleon's XR process to provide maximum ruggedness capability without compromising RF performance. The device operates at a drain-source voltage of 50 V with a breakdown voltage of 110 V. At 225 MHz, it delivers 1400 W output power with 23.5 dB gain and 69% efficiency under pulsed conditions (tp = 100 µs, δ = 20%). It features a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads.
Verify the specific ordering suffix against official documentation to confirm package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF power component. Confirm RoHS compliance requirements align with project specifications before finalizing orders.
Select this component for high-power broadband designs requiring extreme load mismatch tolerance. Verify thermal management capabilities match the junction-to-case thermal resistance specifications. Ensure the operating frequency falls within the HF to 500 MHz range for optimal performance characteristics.
This part belongs to the BLF578 series of power LDMOS transistors manufactured by Ampleon. It serves as an enhanced version of the standard BLF578, incorporating improved ruggedness features while maintaining similar form factors for direct integration into existing high-frequency amplifier architectures.
The BLF578XRS is the earless flanged variant within the same family. Cross-referencing requires verifying mechanical mounting hole configurations and lead arrangements to ensure compatibility with the printed circuit board layout.