BLF642,112

Overview

The BLF642,112 is a 35 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications. It operates within the HF to 1400 MHz frequency range. At 1300 MHz with VDS of 32 V and IDq of 0.2 A, it delivers an average output power of 35 W in CW mode with 19 dB gain and 63% drain efficiency. In 2-tone operation under identical conditions, it provides 17.5 W output power, 19 dB gain, 48% efficiency, and -28 dBc intermodulation distortion. The device features integrated ESD protection and is housed in a flanged SOT467C ceramic package.

Feature Summary

• Broadband performance suitable for digital applications across HF to 1400 MHz
• Integrated electrostatic discharge (ESD) protection
• High ruggedness capable of withstanding VSWR = 10:1 through all phases

Applications

• Communication transmitter applications in the HF to 1400 MHz frequency range
• Industrial applications in the HF to 1400 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Confirm RoHS compliance status matches current regulatory requirements before finalizing purchase orders.

Selection Notes

Select this component for designs requiring high power output and broadband coverage up to 1400 MHz. Evaluate thermal management capabilities carefully, as the junction-to-case thermal resistance is specified at 1.6 K/W under rated load conditions. Ensure the application circuit supports the required 32 V drain-source voltage and appropriate quiescent current settings for optimal class-AB operation.

Part Context

The BLF642 belongs to Ampleon's portfolio of broadband power LDMOS transistors. It is manufactured using silicon technology and is specifically engineered for robust performance in demanding RF environments. The device represents a solution for high-efficiency amplification where wide bandwidth and reliability are critical operational parameters.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent part numbers. Do not assume functional interchangeability with other LDMOS devices without verifying pinout compatibility, electrical characteristics, and thermal limits against the original design requirements.