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The BLF644P is a 70 W LDMOS RF power transistor designed for broadcast, communications, and industrial applications across the HF to 1300 MHz frequency range. It features integrated ESD protection and excellent ruggedness suitable for digital applications. Key electrical parameters include a drain-source voltage of 65 V, a junction-to-case thermal resistance of 0.75 K/W, and an input capacitance of 39 pF. At 860 MHz with a 32 V supply, it delivers 100 W output power with 23.5 dB gain and 66% drain efficiency in class-AB pulsed operation.
Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the component matches the SOT1228A ceramic package variant. Ensure compliance with RoHS directives as stated in the product data sheet. Validate the revision history to ensure the most recent datasheet version is referenced for design specifications.
Select this device for broadband RF power amplification where high ruggedness is required. The flanged ceramic package facilitates effective heat dissipation for continuous wave or pulsed operations. Verify that the operating frequency falls within the specified HF to 1300 MHz range. Ensure the application environment supports the required thermal management for the junction-to-case resistance.
The BLF644P belongs to the Broadband power LDMOS transistor series manufactured by Ampleon USA Inc. It utilizes a flanged LDMOST ceramic package designated as SOT1228A. This package includes two mounting holes and four leads, facilitating secure mechanical attachment and efficient thermal transfer to a heatsink for high-power RF applications.
Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other LDMOS devices without verifying pinout and electrical parameter alignment.