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The BLF645,112 is a 100 W LDMOS RF power push-pull transistor designed for broadcast transmitter and industrial applications. It operates within the HF to 1400 MHz frequency range. At 1300 MHz with VDS of 32 V and IDq of 0.9 A, it delivers 100 W average output power in CW mode with 18 dB gain and 56% drain efficiency. In 2-tone operation under identical conditions, it provides 100 W peak envelope load power with 18 dB gain, 45% drain efficiency, and -32 dBc intermodulation distortion. The device features integrated ESD protection and excellent ruggedness.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package and handling specifications. Confirm RoHS compliance status as stated in the product data sheet prior to procurement. Ensure storage and operating temperature limits are respected during supply chain management to maintain device integrity.
Select this component for broadband RF power amplification requiring push-pull configuration. Verify thermal resistance requirements against the application's heat dissipation capabilities. Ensure the operating voltage and current parameters align with the specified limiting values to prevent permanent damage. Consider the ceramic package mounting holes for mechanical stability in high-power environments.
The BLF645 belongs to Ampleon's portfolio of broadband power LDMOS transistors. It is engineered for robust performance in digital applications due to its wide bandwidth and high linearity. The device utilizes a flanged balanced ceramic package suitable for efficient thermal management and secure mounting in transmitter modules.
Consult official Ampleon substitution guides for verified equivalent part numbers. Do not assume compatibility with other LDMOS families without verifying pinout, electrical characteristics, and thermal specifications.