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The BLF647PS,112 is a 200 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications across the HF to 1500 MHz frequency range. It features integrated ESD protection and excellent ruggedness suitable for digital applications. Key electrical parameters include a drain-source voltage of 65 V, a typical power gain of 17.5 dB at 1300 MHz with 200 W output, and a drain efficiency of 70%. The device operates in an earless flanged ceramic SOT1121B package with a junction-to-case thermal resistance of 0.34 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the requested component matches the exact part number BLF647PS,112 to avoid discrepancies in pinning or performance characteristics relative to other variants in the series.
Select this component for broadband applications requiring 200 W output power within the HF to 1500 MHz spectrum. Ensure the design accommodates the SOT1121B flange mount package and provides adequate thermal management given the 0.34 K/W junction-to-case resistance. Verify that the application environment supports the specified operating temperature limits.
The BLF647PS belongs to Ampleon's broadband power LDMOS transistor portfolio. It shares the BLF647 family designation but utilizes the SOT1121B earless flanged ceramic package instead of the standard leaded variant. This packaging facilitates surface mounting while maintaining robust thermal dissipation capabilities required for high-power RF operations.
The BLF647P is a related variant within the same product family. Verify package compatibility and pin configuration differences before substitution.