BLF647PSJ

BLF647PSJ

$140.61
  • Description:RF MOSFET LDMOS 32V LDMOST
  • Series:-

SKU:d182ab0cac1b Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.3GHz
  • Gain:17.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:200W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

Download product information

BLF647PSJ

Overview

The BLF647PS is a 200 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications across the HF to 1500 MHz frequency range. It features excellent ruggedness, high power gain, and high efficiency, making it suitable for digital applications. The device operates with a drain-source voltage of up to 65 V and delivers 200 W output power at 1300 MHz with 17.5 dB gain and 70% drain efficiency in continuous wave class-B operation. It utilizes an earless flanged ceramic SOT1121B package.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
  • High power gain and high efficiency
  • RoHS compliant

Applications

  • Communication transmitter applications in the HF to 1500 MHz frequency range
  • Industrial applications in the HF to 1500 MHz frequency range

Procurement Notes

Verify the exact ordering suffix against the manufacturer's current documentation, as suffixes can indicate specific packaging or testing variations. Confirm that the component meets RoHS Directive 2002/95/EC requirements if applicable to your design specifications. Ensure proper ESD handling precautions are observed during storage and assembly.

Selection Notes

Select this component for broadband RF power amplifier designs requiring high reliability and ruggedness in the HF to 1500 MHz spectrum. Consider the thermal resistance of 0.34 K/W from junction to case when designing the heat sinking solution. Verify that the operating conditions, such as VDS and IDq, align with the specified test circuits for optimal performance metrics like gain and efficiency.

Part Context

The BLF647PS belongs to Ampleon's portfolio of broadband power LDMOS transistors. It is specifically engineered for robust performance in demanding broadcast and industrial environments. The device represents a mature technology optimized for digital modulation schemes, offering a balance of high output power and linearity within its designated frequency band.

Replacement Considerations

Consult the official Ampleon datasheet for cross-reference information. No direct substitute part numbers are explicitly listed in the provided source material.

BLF647PSJBLF647PSJ
$140.61
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